PENGARUH PENCAMPURAN DAN RASIO PREKURSOR/DOPAN DALAM PEMBUATAN LAPISAN TIPIS FLUORINE DOPED TIN OXIDE (FTO) BERBASIS TIMAH (II) KLORIDA[The Effect of Mixing Condition and Dopant/Precursor Ratio in Fabrication of Fluorine Doped Tin Oxide (FTO) Thin Film Based on Tin (II) Chloride]
Abstract
Flourine-doped tin oxide (FTO) merupakan salah satu oksida yang umum digunakan dalam pelapisan pada kaca yang diberi perlakuan tertentu agar dapat menghantarkan listrik. FTO ini diharapkan dapat menggantikan fungsi indium tin oxide (ITO) yang bahan bakunya sangat mahal dan tersedia dalam jumlah yang terbatas. Percobaan pendahuluan tentang pembuatan lapisan tipis F-SnO2 dilakukan menggunakan kombinasi metode sol gel dan dip coating. Percobaan ini menggunakan bahan baku timah (II) klorida hidrat (SnCl2.2H2O) sebagai prekursor dan ammonium florida (NH4F) sebagai doping. Hasil percobaan menunjukkan bahwa lamanya waktu pencampuran antar prekursor dan doping tidak begitu mempengaruhi kestabilan larutan. Faktor yang signifikan mempengaruhi adalah kondisi pencampuran antara prekursor dan doping. yang terkontrol. Lapisan tipis SnO2 yang dihasilkan dalam percobaan ini mempunyai morfologi heksagonal tidak teratur dan fasa Sn4OF6.
Abstract
Fluorine-doped tin oxide (FTO) is an oxide that is commonly used in the coating on the glass treated a
particular treatment in order to be able to conduct electricity. FTO is expected to replace indium tin oxide
(ITO) whose raw materials are very expensive and available in limited quantities. Preliminary experiments
on the manufacture of F-SnO2 thin film done with using combinations of sol gel method and dip coating.
This experiment used the raw material of tin (II) chloride hydrate (SnCl2.2H2O) as precursors and ammonium
fluoride (NH4F) as doping. The results showed that the processing time between the mixing of precursors and
doping was not so affect the stability of the solution. The significant factor affecting was the concentration
ratio of the dopant/precursor and the conditions of mixing between the precursors and doping. The
concentration ratio of the dopant/precursors of 10% produced the most stable conductive solution
(US-1-½-½) with a thin layer of FTO has generated more regular hexagonal morphology, uniform and phase
of Sn4OF6.
Keywords
Full Text:
PDF (Bahasa Indonesia)References
M. Batzill and U. Diebold, “The surface and materials science of tin oxide,” Prog. Surf. Sci., vol. 79, pp. 47–154, 2005.
A. Purwanto, H. Widiyandari, and A. Jumari, “Fabrication of high-performance fl uorine doped – tin oxide fi lm using fl ame-assisted spray deposition,” Thin Solid Films, vol. 520, pp. 2092 – 2095, 2012.
dan M. K. Akhiruddin Maddu, Rodo Tua Hasiholan, “Penumbuhan Film Nanokristal SnO2 dengan Metode Chemical Bath Deposition ( CBD ),” J. Nanosains Nanoteknologi,ISSN 1979-0880, vol. Khusus, no. November, pp. 96–99, 2009.
S. Muranaka, Y. Bando, and T. Takada, “Influence of substrate temperature and film thickness on the structure of reactively evaporated In2O3 films,” Thin Solid Films, vol. 151, no. 3, pp. 355–364, 1987.
K. B. Sundaram and G. K. Bhagavat, “X-Ray and Electron Diffraction Studies of Chemically Vapour-Deposited Tin Oxide Films,” Thin Solid Films, vol. 78, pp. 35–40, 1981.
K. N. R. K. S. Shamala, L. C. S. Murthy, “Studies on tin oxide films prepared by electron beam evaporation and spray pyrolysis methods - Springer,” Bull. Mater. Sci., vol. 27, no. 3, pp. 295–301, 2004.
S.S. Pan, C. Ye, X.M. Teng, H.T. Fan, and G. H. Li, “Preparation and characterization of nitrogen- incorporated SnO2 films Preparation and characterization of nitrogen-incorporated SnO2 films,” Appl. Phys. A, Mater. Sci. Process., no. November 2015, pp. 1–5, 2006.
E. Elangovan, K. Ramesh, and K. Ramamurthi, “Studies on the structural and electrical properties of spray deposited SnO2: Sb thin films as a function of substrate temperature Studies on the structural and electrical properties of spray deposited,” Solid State Commun., vol. 103, no. November 2015, pp. 523–527, 2004.
D. Ganz, A. Reich, and M. A. Aegerter, “Laser firing of transparent conducting SnO2 sol — gel coatings,” J. Non. Cryst. Solids, vol. 218, p. 242, 1997.
Gilbert William Castellan, Physical Chemistry, Third. New York: Addison-Wesley, 1983, p. 1006.
Refbacks
- There are currently no refbacks.